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Aluminum-doped zinc oxide thin films: a dual approach using experimental techniques and DFT-based calculations
Article
Date:
2025Publishing House and Editing Place:
ELSEVIER SCIENCE BVMagazine:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 318 ELSEVIER SCIENCE BVSummary *
This work investigates the synthesis and properties of ZnO and Al-doped ZnO (AZO) thin films prepared by ultrasonic nebulized spray pyrolysis. The films were characterized using a variety of techniques, including scanning electron microscopy, atomic force microscopy, UV-Vis-IR spectroscopy, and four-point probe resistivity measurements to analyze their morphological, optical, and electrical properties. The study focuses on the impact of aluminum doping on the grain structure, thickness, optical transmittance, and electrical resistivity of the films. It was found that Al doping up to 1 at.% results in smaller grains and thinner films, which enhances the electrical conductivity due to the increase in grain boundary density. Theoretical calculations using the DFT+U approach complemented the experimental findings, suggesting that Al-doped ZnO films retain their semiconductor properties without introducing excess charges. Overall, this study provides insights into the structural and electrical modifications induced by Al doping in ZnO films, contributing to a better understanding of their behavior for potential applications in transparent conductive oxide devices. Information provided by the agent in SIGEVAKey Words
ceramicsaluminum-dopingzinc oxidethin film